论文:
1. M.Y. Jiang, C.K. Chen, P. Wang, D.F. Guo, S.J. Han, X. Li, S.H. Lu, X.J. Hu*. Diamond formation mechanism in chemical vapor deposition, PNAS. 2022, 119, 2201451119.
2. Z.G. Zhu, C.K. Chen, S.H. Lu, X. Li, X.J. Hu*. Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure, Advanced Science, 2025, 12, 2411504.
3. S.H. Lu, Y.F. Lei, K. Zhu, X.J. Hu*. TaC-mediated layer reducing conversion pressure of bilayer graphene to Diamane, Carbon, 2025, 235, 120092.
4. Y.D. Wang, K. Bi, Z.G. Zhu, C.K Chen, X. Li, X.J. Hu*. Diamond Synthesis by Hydrogen Reducing Tantalum Oxide in Graphite at Atmospheric Pressure, Journal of Applied Physics, 2025, 137, 134902.
5. C.K. Chen, C.Q. He, L.X. X.J. Hu*, Hong Vertical graphene and nanodiamond composited films prepared by loading monodispersed molybdenum atoms and annealing, Journal of Materials Chemistry C, 2025, 13, 1338-1344.
6. Y.H. Zheng, S.H. Lu, X.J. Hu*, Direct band gap conversion and transport properties modification of diamond polytypes via strain engineering, Carbon, 2024, 226, 119210.
7. X. Li, X.J. Zhang, F. Xia, C.K. Chen, M.Y. Jiang, S.H. Lu, X.J. Hu*, Deposition of a low-stress diamond film on stainless steel with a Mo/Mo-N interlayer,Surface and Coating technology, 2024, 131290, 0257-8972.
8. S.H. Lu, X.T. Zhang, C.K. Chen, M.Y. Jiang, X. Li, X.J. Hu*, 0xygen-assisted monodisperse transition-metal atoms induced graphite phase transformation to diamond: A First-Principles Calculation, Journal of Materials Chemistry A, 2024, 12, 27767 - 27776
9. Y.H. Zheng, S.H. Lu, C.K. Chen, M.Y. Jiang, X. Li, X.J. Hu*, Pure Hexagonal Diamond with Symmetry-Doping Properties, ACS Applied Materials & Interfaces, 2024, 16, 52674-52681
10. Z.G. Zhu, C.Q. Jiang, C.K. Chen, S.H. Lu, M.Y. Jiang, X. Li, X.J. Hu*. Ordinary-pressure phase transition from graphite to diamond induced by monodispersed Ta atoms, Carbon, 2023, 211, 118098.
11. C.K. Chen, Y. Li, D.F. Guo, C.C. Ke, D. Fan, S.H. Lu, X. Li, M.Y. Jiang, X.J. Hu*. Monodispersed Transition Metals Induced Ordinary-Pressure Phase Transformation from Graphite to Diamond: A First-Principles Calculation. ACS Applied Materials & Interfaces. 2023, 15(25): 30684-30691.
12. C.K. Chen, D. Fan, H. Xu, M.Y. Jiang, X. Li, S.H. Lu, C.C. Ke, X.J. Hu*. Monoatomic tantalum induces ordinary-pressure phase transition from graphite to n-type diamond, Carbon. 2022, 196, 466-473.
13. C.K. Chen, D.F. Guo, D. Fan, S.H. Lu, M.Y. Jiang, X. Li, X.J. Hu*. Semiconductive vertical graphene nanoribbons self-assembled on diamond (100) surface by oxidation: A DFT study. Applied Surface Science. 2022, 604: 154646.
14. S.H. Lu, K. Zhu, X.J. Hu*. Ab Initio Exploration of Energetically and Kinetically Favorable ORR Activity on a 1T-ZrO2 Monolayer for a Nonaqueous Lithium-Oxygen Battery[J]. ACS Applied Materials & Interfaces. 2022, 14(11): 13410-13418.
15. Y.Y. Qiu, D. Fan, G.J. Lan, S.H. Wei, X.J. Hu*, Y. Li. Generalized reactivity descriptor of defective carbon catalysts for acetylene hydrochlorination: the ratio of sp(2):sp(3) hybridizationl. Chemical Communications, 2020, 56(94), 14877-14880.
16. D. Fan, C.K. Chen, S.H. Lu, X. Li, M.Y. Jiang, X.J. Hu*. Highly Stable Two-Dimensional Iron Monocarbide with Planar Hypercoordinate Moiety and Superior Li-Ion Storage Performance. ACS Appl. Mater. Interfaces.2020, 12(27), 30297-30303.
17. S.H. Lu, D. Fan, C.K. Chen, M.Y. Jiang, Y.M. Ma, X.J. Hu*. Ground-state structure of oxidized diamond (100) surface: An electronically nearly surface-free reconstruction. Carbon. 2020, 159,9-15.
18. M.Y. Jiang, Z.Q. Zhang, C.K. Chen, W.C. Ma, S.J. Han, X. Li, S.H. Lu, X.J. Hu*. High efficient oxygen reduced reaction electrodes by constructing vertical graphene sheets on separated papillary granules formed nanocrystalline diamond films. Carbon.2020, 168, 536-545.
专利:
1.胡晓君,一种n型纳米金刚石薄膜及制备方法。已授权,专利号:ZL200910155306.3,申请时间:2009-12-10 授权时间:2012-06-27
2.胡晓君, 一种高迁移率的n型纳米金刚石薄膜及制备方法。已授权,专利号:ZL201210594869.4,申请时间:2012-12-31 授权时间:2015-05-27
3.胡晓君,梅盈爽,一种具有Si-V发光的纳米金刚石薄膜1及其制备方法。已授权,专利号:ZL201410256615.0,申请时间:2014-06-10 授权时间:2016-09-21
4.胡晓君,仰宗春,一种单颗粒层纳米金刚石薄膜及其制备方法。已授权,专利号:ZL201510149374.4,申请时间:2015-03-31 授权时间:2017-04-12
5.胡晓君,仰宗春,一种具有强Si-V发光的单颗粒层纳米金刚石薄膜及其制备方法。已授权,专利号:ZL201510149396.0,申请时间:2015-03-31 授权时间:2017-04-12
6.胡晓君,陈成克,一种高迁移率的n型纳米金刚石-石墨烯纳米带复合薄膜及制备方法。已授权,申请号:ZL201510219422.2,申请时间:2015-04-30 授权时间:2017-09-26
7.胡晓君,陈成克,一种纳米金刚石-石墨烯纳米带复合薄膜及制备方法。已授权,申请号:201510219725.4,申请时间:2015-04-30 授权时间:2017-09-26
8.胡晓君,黄凯,一种n型纳米金刚石薄膜/p型单晶硅的异质pn结原型器件及其制备方法。已授权,申请号:201510151263.7,申请时间:2015-03-31 授权时间:2017-12-05
9.胡晓君,曹屿,陈建清,一种在不锈钢表面制备金刚石薄膜的方法。已授权,申请号:ZL2015107783952,申请时间:2015-11-13 授权时间:2017-12-05
10.胡晓君,徐辉,一种具有SiV发光的纳米金刚石薄膜及其可控制备方法。已授权,申请号:201510570930.5,申请时间:2015-09-09 授权时间:2017-12-05
11.胡晓君,徐玲倩,一种提高硼掺杂纳米金刚石薄膜p型导电性能的方法。已授权,申请号:ZL201510248811.8,申请时间:2015-05-14 授权时间:2018-01-16
12.胡晓君,杭鹏杰,俞浩,一种硼掺杂单颗粒层纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201510779488.7,申请时间:2015-11-13 授权时间:2018-2-13
13.胡晓君,仰宗春,一种Si-V发光的金刚石颗粒与石英光纤的复合方法。已授权,申请号:ZL201610866071.9,申请时间:2016-09-30 授权时间:2019-04-9
14.胡晓君,仰宗春,一种Si-V发光的纳米金刚石晶粒及其制备方法。已授权,申请号:ZL201610870724.0,申请时间:2016-09-30 授权时间:2019-04-9
15.胡晓君,梅盈爽,一种具有SiV发光的单晶金刚石及其制备方法。已授权,申请号:ZL201610865968.X,申请时间:2016-09-30 授权时间:2019-05-31
16.胡晓君,陈成克,具有SiV发光的超小晶粒尺寸纳米金刚石薄膜及其制备。已授权,申请号:ZL201610870721.7,申请时间:2016-09-30 授权时间:2019-06-14
17.胡晓君,仰宗春,石英基Si-V发光的单颗粒层纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201610866132.1,申请时间:2016-09-30 授权时间:2019-07-26
18.胡晓君,冯涛,李晓,吕枫,一种在不锈钢表面的过渡层上制备金刚石薄膜的方法。已授权,申请号:ZL201711205732.4,申请时间:2017-11-27 授权时间:2019-12-24
19.胡晓君,陈成克,徐辉,刘建军,梅盈爽,樊冬,一种具有晶粒密堆积结构的高迁移率n型纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810247215.1,申请时间:2018-03-23 授权时间:2020-06-09
20.胡晓君,刘建军,徐辉,梅盈爽,陈成克,樊冬,一种高迁移率n型超薄纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810246649.X,申请时间:2018-03-23 授权时间:2020-06-09
21.胡晓君,徐辉,梅盈爽,陈成克,樊冬,一种晶粒密堆积n型纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810245815.4,申请时间:2018-03-23 授权时间:2020-06-23
22.胡晓君,吕枫,冯涛,李晓,陈建清,一种在不锈钢表面沉积金刚石薄膜的新方法。已授权,申请号:ZL201711205535.2,申请时间:2017-11-27 授权时间:2020-10-27
23. Xiaojun Hu, Chengke Chen, Method for manufacturing an ultra small grain-size nanocrystalline diamond film having a SiV photoluminescence.已授权,申请号:US 11,186,923 B2,申请时间:2020-10-16 授权时间:2021-11-30
24.胡晓君,蒋梅燕,陈成克,李晓,硫离子注入纳米金刚石-石墨烯复合薄膜电极及其制备方法。已授权,申请号:ZL201911352014.9,申请时间:2019-12-25 授权时间:2022.04.26
25. 胡晓君,姜从强,陈成克,蒋梅燕,李晓,一种制备TaC的方法。已授权,申请号:ZL 202110355584.4,申请时间:2021-04-01 授权时间:2023.05.23
26.胡晓君,朱志光,姜从强,陈成克,郭迪锋,柯昌成,一种低压下基于石墨制备金刚石的方法。已授权,申请号:202210305804.7,申请日期:2022-03-25 授权日期:2023-09-05
27. 胡晓君,朱志光,姜从强,陈成克,郭迪锋,柯昌成,一种低压下将金刚石薄膜中石墨相转变为金刚石相的新方法。已授权,申请号:202210271216.6,申请日期:2022-03-18 授权日期:2023-08-31
28.胡晓君,陈康,陈成克,蒋梅燕,李晓,氮化铝基底上的低粗糙度微晶金刚石薄膜及其制备方法。申请号:ZL202110886090.9,申请日期:2021-08-03 授权日期:2024-04-09
29.胡晓君,朱志光,王禹丹,陈成克,鲁少华,李晓,蒋梅燕,一种常压下基于石墨制备金刚石的方法。专利号:ZL202310059001.2,申请日期2023-01-18 授权日期:2024-10-18
30.胡晓君,郑玉浩,唐彬杰,陈成克,蒋梅燕,李晓,鲁少华,一种密堆积纳米金刚石薄膜及其制备方法。专利号:ZL202211549878.1,申请日期:2022-12-05 授权日期:2024-11-01
31.胡晓君,陈爱盛,张志强,蒋梅燕,陈成克,李晓,鲁少华,纳米金刚石片竖立组装的高迁移率n型薄膜及其制备方法。专利号:ZL202310203923.6,申请日期2023-03-06 授权日期:2024-12-06
32.胡晓君,张涛,陈爱盛,张志强,蒋梅燕,陈成克,李晓,鲁少华,纳米金刚石-石墨烯复合竖立片层薄膜电极及其制备方法。专利号:ZL202310203918.5,申请日期:2023-03-06 授权日期:2024-12-27
33.胡晓君,洪鲁枭,陈成克,蒋梅燕,李晓,鲁少华,一种竖立石墨烯转变为金刚石的方法。专利号:ZL202310632157.5,申请日期:2023-05-31 授权日期:2025-02-08
34. 胡晓君,朱奕衡,蒋梅燕,陈成克,李晓,鲁少华,一种基于石墨烯竖立片层制备纳米金刚石的方法。专利号:ZL202310639800.7,申请日期:2023-05-31 授权日期:2025-02-08
35.胡晓君,魏冰琪,一种常压下将石墨转变为金刚石的方法。专利号:ZL202311754625.2,申请日期:2023-12-20 授权日期:2025-02-08
36.胡晓君,毕凯,朱志光,张有志,王禹丹,魏冰琪,一种常压下基于石墨制备金刚石的方法。专利号:ZL202410131992.5,申请日期:2024-02-31 授权日期:2025-04-02