论文:
1. M.Y. Jiang, C.K. Chen, P. Wang, D.F. Guo, S.J. Han, X. Li, S.H. Lu, X.J. Hu*. Diamond formation mechanism in chemical vapor deposition, PNAS. 2022, 119, 2201451119. (IF:11.205, Top1区, ZJUT100期刊, ESI-TOP10期刊论文)
2. Y.H. Zheng, S.H. Lu, X.J. Hu*, Direct band gap conversion and transport properties modification of diamond polytypes via strain engineering, Carbon, 2024, 226, 119210. (IF:10.5, Top1区 ZJUT100期刊)
3. X. Li, X.J. Zhang, F. Xia, C.K. Chen, M.Y. Jiang, S.H. Lu, X.J. Hu*, Deposition of a low-stress diamond film on stainless steel with a Mo/Mo-N interlayer,Surface and Coating technology, 2024, 131290, 0257-8972.
4. S.H. Lu, X.T. Zhang, C.K. Chen, M.Y. Jiang, X. Li, X.J. Hu*, 0xygen-assisted monodisperse transition-metal atoms induced graphite phase transformation to diamond: A First-Principles Calculation, Journal of Materials Chemistry A, 2024, 12, 27767 - 27776
5. Y.H. Zheng, S.H. Lu, C.K. Chen, M.Y. Jiang, X. Li, X.J. Hu*, Pure Hexagonal Diamond with Symmetry-Doping Properties, ACS Applied Materials & Interfaces, 2024, 16, 52674-52681
6. Z.G. Zhu, C.Q. Jiang, C.K. Chen, S.H. Lu, M.Y. Jiang, X. Li, X.J. Hu*. Ordinary-pressure phase transition from graphite to diamond induced by monodispersed Ta atoms, Carbon, 2023, 211, 118098. (IF:11.307, Top1区, ZJUT100期刊)
7. C.K. Chen, Y. Li, D.F. Guo, C.C. Ke, D. Fan, S.H. Lu, X. Li, M.Y. Jiang, X.J. Hu*. Monodispersed Transition Metals Induced Ordinary-Pressure Phase Transformation from Graphite to Diamond: A First-Principles Calculation. ACS Applied Materials & Interfaces. 2023, 15(25): 30684-30691.(IF:9.229, Top1区, ZJUT100期刊)
8. C.K. Chen, D. Fan, H. Xu, M.Y. Jiang, X. Li, S.H. Lu, C.C. Ke, X.J. Hu*. Monoatomic tantalum induces ordinary-pressure phase transition from graphite to n-type diamond, Carbon. 2022, 196, 466-473. (IF:11.307, Top1区, ZJUT100期刊)
9. C.K. Chen, D.F. Guo, D. Fan, S.H. Lu, M.Y. Jiang, X. Li, X.J. Hu*. Semiconductive vertical graphene nanoribbons self-assembled on diamond (100) surface by oxidation: A DFT study. Applied Surface Science. 2022, 604: 154646.(IF:7.319, Top1区, ESI-TOP10期刊论文)
10. S.H. Lu, K. Zhu, X.J. Hu*. Ab Initio Exploration of Energetically and Kinetically Favorable ORR Activity on a 1T-ZrO2 Monolayer for a Nonaqueous Lithium-Oxygen Battery[J]. ACS Applied Materials & Interfaces. 2022, 14(11): 13410
13418. (IF:9.229, Top1区, ZJUT100期刊)
11. Y.Y. Qiu, D. Fan, G.J. Lan, S.H. Wei, X.J. Hu*, Y. Li. Generalized reactivity descriptor of defective carbon catalysts for acetylene hydrochlorination: the ratio of sp(2):sp(3) hybridizationl. Chemical Communications, 2020, 56(94), 14877-14880.(IF:5.996, ZJUT100期刊)
12. D. Fan, C.K. Chen, S.H. Lu, X. Li, M.Y. Jiang, X.J. Hu*. Highly Stable Two-Dimensional Iron Monocarbide with Planar Hypercoordinate Moiety and Superior Li-Ion Storage Performance. ACS Appl. Mater. Interfaces.2020, 12(27), 30297-30303. (IF:8.758, Top1区, ZJUT100期刊)
13. S.H. Lu, D. Fan, C.K. Chen, M.Y. Jiang, Y.M. Ma, X.J. Hu*. Ground-state structure of oxidized diamond (100) surface: An electronically nearly surface-free reconstruction. Carbon. 2020, 159,9-15. (IF:8.821, Top1区, ZJUT100期刊)
14. M.Y. Jiang, Z.Q. Zhang, C.K. Chen, W.C. Ma, S.J. Han, X. Li, S.H. Lu, X.J. Hu*. High efficient oxygen reduced reaction electrodes by constructing vertical graphene sheets on separated papillary granules formed nanocrystalline diamond films. Carbon.2020, 168, 536-545. (ZJUT100期刊,Top1区,IF: 8.821)
专利:
1.胡晓君,一种n型纳米金刚石薄膜及制备方法。已授权,专利号:ZL200910155306.3,申请时间:2009-12-10 授权时间:2012-06-27
2.胡晓君, 一种高迁移率的n型纳米金刚石薄膜及制备方法。已授权,专利号:ZL201210594869.4,申请时间:2012-12-31 授权时间:2015-05-27
3.胡晓君,梅盈爽,一种具有Si-V发光的纳米金刚石薄膜1及其制备方法。已授权,专利号:ZL201410256615.0,申请时间:2014-06-10 授权时间:2016-09-21
4.胡晓君,仰宗春,一种单颗粒层纳米金刚石薄膜及其制备方法。已授权,专利号:ZL201510149374.4,申请时间:2015-03-31 授权时间:2017-04-12
5.胡晓君,仰宗春,一种具有强Si-V发光的单颗粒层纳米金刚石薄膜及其制备方法。已授权,专利号:ZL201510149396.0,申请时间:2015-03-31 授权时间:2017-04-12
6.胡晓君,陈成克,一种高迁移率的n型纳米金刚石-石墨烯纳米带复合薄膜及制备方法。已授权,申请号:ZL201510219422.2,申请时间:2015-04-30 授权时间:2017-09-26
7.胡晓君,陈成克,一种纳米金刚石-石墨烯纳米带复合薄膜及制备方法。已授权,申请号:201510219725.4,申请时间:2015-04-30 授权时间:2017-09-26
8.胡晓君,黄凯,一种n型纳米金刚石薄膜/p型单晶硅的异质pn结原型器件及其制备方法。已授权,申请号:201510151263.7,申请时间:2015-03-31 授权时间:2017-12-05
9.胡晓君,曹屿,陈建清,一种在不锈钢表面制备金刚石薄膜的方法。已授权,申请号:ZL2015107783952,申请时间:2015-11-13 授权时间:2017-12-05
10.胡晓君,徐辉,一种具有SiV发光的纳米金刚石薄膜及其可控制备方法。已授权,申请号:201510570930.5,申请时间:2015-09-09 授权时间:2017-12-05
11.胡晓君,徐玲倩,一种提高硼掺杂纳米金刚石薄膜p型导电性能的方法。已授权,申请号:ZL201510248811.8,申请时间:2015-05-14 授权时间:2018-01-16
12.胡晓君,杭鹏杰,俞浩,一种硼掺杂单颗粒层纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201510779488.7,申请时间:2015-11-13 授权时间:2018-2-13
13.胡晓君,仰宗春,一种Si-V发光的金刚石颗粒与石英光纤的复合方法。已授权,申请号:ZL201610866071.9,申请时间:2016-09-30 授权时间:2019-04-9
14.胡晓君,仰宗春,一种Si-V发光的纳米金刚石晶粒及其制备方法。已授权,申请号:ZL201610870724.0,申请时间:2016-09-30 授权时间:2019-04-9
15.胡晓君,梅盈爽,一种具有SiV发光的单晶金刚石及其制备方法。已授权,申请号:ZL201610865968.X,申请时间:2016-09-30 授权时间:2019-05-31
16.胡晓君,陈成克,具有SiV发光的超小晶粒尺寸纳米金刚石薄膜及其制备。已授权,申请号:ZL201610870721.7,申请时间:2016-09-30 授权时间:2019-06-14
17.胡晓君,仰宗春,石英基Si-V发光的单颗粒层纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201610866132.1,申请时间:2016-09-30 授权时间:2019-07-26
18.胡晓君,冯涛,李晓,吕枫,一种在不锈钢表面的过渡层上制备金刚石薄膜的方法。已授权,申请号:ZL201711205732.4,申请时间:2017-11-27 授权时间:2019-12-24
19.胡晓君,陈成克,徐辉,刘建军,梅盈爽,樊冬,一种具有晶粒密堆积结构的高迁移率n型纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810247215.1,申请时间:2018-03-23 授权时间:2020-06-09
20.胡晓君,刘建军,徐辉,梅盈爽,陈成克,樊冬,一种高迁移率n型超薄纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810246649.X,申请时间:2018-03-23 授权时间:2020-06-09
21.胡晓君,徐辉,梅盈爽,陈成克,樊冬,一种晶粒密堆积n型纳米金刚石薄膜及其制备方法。已授权,申请号:ZL201810245815.4,申请时间:2018-03-23 授权时间:2020-06-23
22.胡晓君,吕枫,冯涛,李晓,陈建清,一种在不锈钢表面沉积金刚石薄膜的新方法。已授权,申请号:ZL201711205535.2,申请时间:2017-11-27 授权时间:2020-10-27
23. Xiaojun Hu, Chengke Chen, Method for manufacturing an ultra small grain-size nanocrystalline diamond film having a SiV photoluminescence.已授权,申请号:US 11,186,923 B2,申请时间:2020-10-16 授权时间:2021-11-30
24.胡晓君,蒋梅燕,陈成克,李晓,硫离子注入纳米金刚石-石墨烯复合薄膜电极及其制备方法。已授权,申请号:ZL201911352014.9,申请时间:2019-12-25 授权时间:2022.04.26
25. 胡晓君,姜从强,陈成克,蒋梅燕,李晓,一种制备TaC的方法。已授权,申请号:ZL 202110355584.4,申请时间:2021-04-01 授权时间:2023.05.23
26.胡晓君,朱志光,姜从强,陈成克,郭迪锋,柯昌成,一种低压下基于石墨制备金刚石的方法。已授权,申请号:202210305804.7,申请日期:2022-03-25 授权日期:2023-09-05
27. 胡晓君,朱志光,姜从强,陈成克,郭迪锋,柯昌成,一种低压下将金刚石薄膜中石墨相转变为金刚石相的新方法。已授权,申请号:202210271216.6,申请日期:2022-03-18 授权日期:2023-08-31
28.胡晓君,陈康,陈成克,蒋梅燕,李晓,氮化铝基底上的低粗糙度微晶金刚石薄膜及其制备方法。申请号:ZL202110886090.9,申请日期:2021-08-03 授权日期:2024-04-09
29.胡晓君,朱志光,王禹丹,陈成克,鲁少华,李晓,蒋梅燕,一种常压下基于石墨制备金刚石的方法。专利号:ZL202310059001.2,申请日期2023-01-18 授权日期:2024-10-18